semiconductor group 1 09/96 buz 80 sipmos ? power transistor ? n channel ? enhancement mode ? avalanche-rated pin 1 pin 2 pin 3 g d s type v ds i d r ds(on ) package ordering code buz 80 800 v 3.1 a 4 w to-220 ab c67078-s1309-a2 maximum ratings parameter symbol values unit continuous drain current t c = 28 c i d 3.1 a pulsed drain current t c = 25 c i dpuls 12.5 avalanche current,limited by t jmax i ar 3.1 avalanche energy,periodic limited by t jmax e ar 8 mj avalanche energy, single pulse i d = 3.1 a, v dd = 50 v, r gs = 25 w l = 62.4 mh, t j = 25 c e as 320 gate source voltage v gs 20 v power dissipation t c = 25 c p tot 100 w operating temperature t j -55 ... + 150 c storage temperature t stg -55 ... + 150 thermal resistance, chip case r thjc 1.25 k/w thermal resistance, chip to ambient r thja 75 din humidity category, din 40 040 e iec climatic category, din iec 68-1 55 / 150 / 56
semiconductor group 2 09/96 buz 80 electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma, t j = 25 c v (br)dss 800 - - v gate threshold voltage v gs = v ds, i d = 1 ma v gs(th) 2.1 3 4 zero gate voltage drain current v ds = 800 v, v gs = 0 v, t j = 25 c v ds = 800 v, v gs = 0 v, t j = 125 c i dss - - 10 0.1 100 1 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 100 na drain-source on-resistance v gs = 10 v, i d = 2 a r ds(on) - 3.5 4 w
semiconductor group 3 09/96 buz 80 electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2 * i d * r ds(on)max, i d = 2 a g fs 1 3.6 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 900 1350 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 95 140 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 50 75 turn-on delay time v dd = 30 v, v gs = 10 v, i d = 3 a r gs = 50 w t d(on) - 15 25 ns rise time v dd = 30 v, v gs = 10 v, i d = 3 a r gs = 50 w t r - 65 85 turn-off delay time v dd = 30 v, v gs = 10 v, i d = 3 a r gs = 50 w t d(off) - 200 270 fall time v dd = 30 v, v gs = 10 v, i d = 3 a r gs = 50 w t f - 65 85
semiconductor group 4 09/96 buz 80 electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t c = 25 c i s - - 3.1 a inverse diode direct current,pulsed t c = 25 c i sm - - 12.5 inverse diode forward voltage v gs = 0 v, i f = 6.2 a v sd - 1 1.3 v reverse recovery time v r = 100 v, i f = l s, d i f /d t = 100 a/s t rr - 370 - ns reverse recovery charge v r = 100 v, i f = l s, d i f /d t = 100 a/s q rr - 2.5 - c
5 09/96 semiconductor group buz 80 drain current i d = | ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 c 160 t c 0.0 0.4 0.8 1.2 1.6 2.0 2.4 a 3.2 i d power dissipation p tot = | ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 90 w 110 p tot safe operating area i d = | ( v ds ) parameter: d = 0.01 , t c = 25c -1 10 0 10 1 10 2 10 a i d 10 0 10 1 10 2 10 3 v v ds r ds(on) = v ds / i d dc 10 ms 1 ms 100 s t p = 18.0 s transient thermal impedance z th jc = | ( t p ) parameter: d = t p / t -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
semiconductor group 6 09/96 buz 80 typ. output characteristics i d = |( v ds ) parameter: t p = 80 s , t j = 25 c 0 10 20 30 40 v 60 v ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 a 7.0 i d v gs [v] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l p tot = 100 w l 20.0 typ. drain-source on-resistance r ds (on) = |( i d ) parameter: t p = 80 s, t j = 25 c 0.0 1.0 2.0 3.0 4.0 5.0 a 6.5 i d 0 1 2 3 4 5 6 7 8 9 10 11 w 13 r ds (on) v gs [v] = a 4.0 v gs [v] = a a 4.5 b b 5.0 c c 5.5 d d 6.0 e e 6.5 f f 7.0 g g 7.5 h h 8.0 i i 9.0 j j 10.0 k k 20.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 3 2 x i d x r ds(on)max 0 1 2 3 4 5 6 7 8 v 10 v gs 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 a 5.0 i d typ. forward transconductance g fs = f ( i d ) parameter: t p = 80 s, v ds 3 2 x i d x r ds(on)max 0.0 0.5 1.0 1.5 2.0 2.5 3.0 a 4.0 i d 0.0 0.5 1.0 1.5 2.0 s 3.0 g fs
7 09/96 semiconductor group buz 80 gate threshold voltage v gs (th) = | ( t j ) parameter: v gs = v ds , i d = 1 ma 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v 4.6 v gs(th) -60 -20 20 60 100 c 160 t j 2% typ 98% drain-source on-resistance r ds (on) = | ( t j ) parameter: i d = 2 a, v gs = 10 v -60 -20 20 60 100 c 160 t j 0 2 4 6 8 10 12 14 16 w 19 r ds (on) typ 98% typ. capacitances c = f ( v ds ) parameter: v gs = 0v, f = 1mhz 0 5 10 15 20 25 30 v 40 v ds -2 10 -1 10 0 10 1 10 nf c c rss c oss c iss forward characteristics of reverse diode i f = | ( v sd ) parameter: t j , t p = 80 s -1 10 0 10 1 10 2 10 a i f 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
semiconductor group 8 09/96 buz 80 avalanche energy e as = | ( t j ) parameter: i d = 3.1 a, v dd = 50 v r gs = 25 w , l = 62.4 mh 20 40 60 80 100 120 c 160 t j 0 40 80 120 160 200 240 280 mj 340 e as typ. gate charge v gs = | ( q gate ) parameter: i d puls = 5 a 0 10 20 30 40 50 nc 70 q gate 0 2 4 6 8 10 12 v 16 v gs ds max v 0,8 ds max v 0,2 drain-source breakdown voltage v (br)dss = | ( t j ) -60 -20 20 60 100 c 160 t j 720 740 760 780 800 820 840 860 880 900 920 v 960 v (br)dss
semiconductor group 9 09/96 buz 80 package outlines to-220 ab dimension in mm
|
